Novel CVD-based growth process for zinc oxide layers

At the University of Ulm, a cost-effective deposition process for zinc oxide (ZnO) layers has been developed that provides very good layer qualities and permits a high growth rate. Source material is zinc oxide, no elementary zinc is required.
Using this innovative CVD-based process, it is possible without the addition of environmentally-harmful additives, to create weakly-conductive layers, easily etchable sacrificial layers in multi-layer systems, conductive transparent layers (transparent conductive oxide, TCO) and generally conductive contacts or conductor structures on fixed-body substrates such as sapphire, silicon, silicon carbide or gallium nitride. Furthermore, this process is suitable for generating nano- or microstructures for sensor applications, thin-film transistors (TFT on displays), Schottky diodes, and field effect transistors.

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