New Magnetic RAM Cell Design and Method for Stable and Fast Writing
The novel magnetic ram design and switching method guarantee a much higher stability against unwanted dipolar interaction between neighbouring MRAM cells than conventional cells. A 3D analysis of the switching and the stability of the magnetization by micromagnetic simulations show stable switching rates up to 1.4 GHz for pulses shaped according to CMOS specifications. Furthermore, the method allows successive writings of a memory cell without time delay due to a pre-read of the bit configuration. Finally, two different wiring schemes are proposed: one involving the application of a bipolar field pulse; the other based on the application of unipolar field pulses.
Further Information: PDF
INNOVECTIS Gesellschaft für Innovations-Dienstleistungen mbH
Phone: +49 (0)69/798-49721
Contact
Dr. Otmar Schöller
Media Contact
All latest news from the category: Technology Offerings
Newest articles
High-energy-density aqueous battery based on halogen multi-electron transfer
Traditional non-aqueous lithium-ion batteries have a high energy density, but their safety is compromised due to the flammable organic electrolytes they utilize. Aqueous batteries use water as the solvent for…
First-ever combined heart pump and pig kidney transplant
…gives new hope to patient with terminal illness. Surgeons at NYU Langone Health performed the first-ever combined mechanical heart pump and gene-edited pig kidney transplant surgery in a 54-year-old woman…
Biophysics: Testing how well biomarkers work
LMU researchers have developed a method to determine how reliably target proteins can be labeled using super-resolution fluorescence microscopy. Modern microscopy techniques make it possible to examine the inner workings…
