HiVP-CMOS (High Voltage-High Power-CMOS)
A novel arrangement, namely cascading with “resistive diode boosting”, makes it possible to increase the output voltage of MOS power amplifiers. The invention limits the break down voltage by means of a limiting path between gate and drain. This path has a defined resistance and can be switched on or off. Additionally, it is possible to adopt a parallel configuration for high current applications
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