Optical and SEM images of the InAsyP1-y nanowire array. Copyright : UNIST
Electrical characterization of the heterojunction solar cells composed of n- InAs0.7P0.3 nanowire array on p-Si (111) substrate. Copyright : UNIST
In this work, however, Prof. Choi's group developed a novel technique of growing III-V semiconductor nanowires without metal catalysts or nano-patterning. Metal-organic chemical vapor deposition (MOCVD, AIXTRON A200) was used for the growth of the InAsyP1-y. 2 inch Si (111) wafer was cleaned with buffer oxide etch for 1 minute and deionized (DI) water for 2 seconds. Then, the wafer was immediately dipped in poly-L-lysine solution (Sigma-Aldrich inc.) for 3 minutes then rinsed in DI water for 10 seconds. The Si substrate was then loaded into the MOCVD reactor without any delay. The reactor pressure was lowered to 50 mbar with 15liter/min of hydrogen gas flow. Then the reactor was heated to growth temperatures (570 - 630°C), and stabilized for 10 minutes.Kyoung Jin Choi, Associate Professor at Ulsan National Institute of Science and Technology (UNIST), Korea, and Xiuling Li, Professor at University of Illinois, U.S.A. led the research and this description of the new research was published on the web on May 7 in ACS Nano. (Title: Wafer-Scale Production of Uniform InAsyP1-y Nanowire Array on Silicon for Heterogeneous Integration).
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