Put the inventor of the light-emitting diode and the maker of the world’s fastest transistor together in a research laboratory and what kinds of bright ideas might surface? One answer is a light-emitting transistor that could revolutionize the electronics industry.
Professors Nick Holonyak Jr. and Milton Feng at the University of Illinois at Urbana-Champaign have uncovered a light-emitting transistor that could make the transistor the fundamental element in optoelectronics as well as in electronics. The scientists report their discovery in the Jan. 5 issue of the journal Applied Physics Letters.
“We have demonstrated light emission from the base layer of a heterojunction bipolar transistor, and showed that the light intensity can be controlled by varying the base current,” said Holonyak, a John Bardeen Professor of Electrical and Computer Engineering and Physics at Illinois. Holonyak invented the first practical light-emitting diode and the first semiconductor laser to operate in the visible spectrum.
James E. Kloeppel | UIUC
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