The ability to make atomic-level changes in the functional components of semiconductor switches, demonstrated by a team of Oak Ridge National Laboratory, North Carolina State University and University of Tennessee physicists, could lead to huge changes in the semiconductor industry. The results are reported in the June 13 issue of Science.
This image illustrates the concept of “Coulomb buffer,” the region between oxide (above) and silicon (below) in nanoswitches, that can be “tuned” through atomic-level manipulation for desirable semiconductor characteristics, an advance that benefits both researchers and manufacturers.
Semiconductor devices, the building blocks of computing chips that control everything from coffee makers to Mars landings, depend on microscopic solid-state transistors, tiny electronic on-off switches made of layers of metals, oxides and silicon. These switches stop and start the flow of electrons, and work themselves because of the microscopic interface between the oxide layer and the silicon layer, in the realm of individual atoms, where minute positive and negative charges determine semiconductor success or failure.
Until now, researchers – and the multibillion-dollar semiconductor industries they support – had to accept the limitations that each crucial interface contains.
Mick Kulikowski | NC State University
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The miniaturization of the current technology of storage media is hindered by fundamental limits of quantum mechanics. A new approach consists in using so-called spin-crossover molecules as the smallest possible storage unit. Similar to normal hard drives, these special molecules can save information via their magnetic state. A research team from Kiel University has now managed to successfully place a new class of spin-crossover molecules onto a surface and to improve the molecule’s storage capacity. The storage density of conventional hard drives could therefore theoretically be increased by more than one hundred fold. The study has been published in the scientific journal Nano Letters.
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