GaN Gunn Diode for High Frequency and High Power Signal Generation
The new vertical GaN-based Gunn device is made on GaN substrate and able to generate high power microwave signals. By developing special contacting, means of a stable NDR (Negative Differential Resistivity) region could be achieved. Thereby, electrical fields which are considerably higher than the threshold value can be applied without electromigration effects from the contacts.
Further Information: PDF
INNOVECTIS Gesellschaft für Innovations-Dienstleistungen mbH
Phone: +49 (0)69/798-49721
Contact
Dr. Otmar Schöller
Media Contact
All latest news from the category: Technology Offerings
Newest articles
Webb captures top of iconic horsehead nebula in unprecedented detail
NASA’s James Webb Space Telescope has captured the sharpest infrared images to date of a zoomed-in portion of one of the most distinctive objects in our skies, the Horsehead Nebula….
Cost-effective, high-capacity, and cyclable lithium-ion battery cathodes
Charge-recharge cycling of lithium-superrich iron oxide, a cost-effective and high-capacity cathode for new-generation lithium-ion batteries, can be greatly improved by doping with readily available mineral elements. The energy capacity and…
Novel genetic plant regeneration approach
…without the application of phytohormones. Researchers develop a novel plant regeneration approach by modulating the expression of genes that control plant cell differentiation. For ages now, plants have been the…
