Phase Change ROM – Gallium Oxide for Permanent Data Storage
The Phase Change ROM is based on the invention that in amorphous GaOx crystallization of Ga2O3 causes a jump in the electrical conductivity of more than 7 orders of magnitude. The transition of amorphous gallium oxide to the crystalline compound Ga2O3 can be achieved within defined areas of nanoscopic dimensions by means of laser irradiation. In this way a non-volatile data storage medium can be obtained.
Commercial Opportunity The Phase Change ROM technology offers the potential for persistent data storage with high storage density. Readout of stored information is possible electrically or optically.
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