Improved inverter for monotype circuits
The innovation relates to electronic devices
comprising organic semiconductors that are primarily P-type devices. The core of the invention is related to an improved load structure that enhances the performance of the inverter circuit. This load structure is not limited to inverter but can be used in all other circuit blocks (e.g. differential amplifier, all digital gates etc) to realize better performance. This is also applicable to all NMOS only electronic circuits using other semiconductor materials like Si, amorphous silicon etc.
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