Anisotropische Struktur
The patented invention describes a process for anisotropic
structuring of materials in micro- and optoelectronics and micromechanics. It comprises an etching process and a passivation carried out with oxygen-containing gases or oxygencontaining gas plasmas. The use of chlorine (Cl2) and Oxygen (O2) as appropriate etching gases has proven to cleanly and effectively etch heated substrates of GaAs and InP and their ternary and quaternary alloys. The etch rate is increased by heating the substrate to a temperature of 100° C to 400° C.
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