Bipolartransistor
The patented invention refers to a hetero-structure bipolar
transistor. The component has been designed for the use with high operating voltage, high currents and high frequencies. During operation the bipolar transistor´s layer sequence ensures a high breakdown voltage. Due to its high ampacity and high breakdown voltage the patented bipolar transistor is very attractive for high power switching applications. The low layer thickness (1,5 μm) of the collector will facilitate the production process, resulting in a better performance (bandwidth, range). This technology outperforms available state of the art technology.
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