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Contact for electrically operated II/VI Semiconductor Structures

11.09.2012
</a><strong>Background</strong><br>

II/VI semiconductor structures typically use palladium and gold for metallic contacting. These metals have a large contact resistance which causes thermal stress and a high rate of degradation.</p> <p><!--break--><strong>Technology</strong><br> We offer a process for improved electrical contacts for II/VI semiconductor structures. In order to reduce the contact resistance, a lithium nitride (Li3N) layer is deposited between the semiconductor structure and the contact layer. This permits the operation of semiconductor devices (e.g. laser diodes) with lower operating voltages resulting in a longer service life.<br> <br>

<strong>Benefits</strong><br> <ul> <li><span style="display: none;" id="1314191134682S"> </span>reduced contact resistance of II/VI semiconductor structures</li> <li>lower operating voltages for laser diodes</li> <li>reduces thermal stress</li> <li>increased service lifetime of laser diodes</li> </ul><br> <strong>IP Rights</strong><br> German patent DE 199 55 280 C1 <br> US Patent US 6,673 641 B1 and <br> US 6,893,950 B2 <strong><br> <br> Patent Owner</strong><br> Technische Universität Berlin, Germany</p> <p class="MsoNormal" style="margin-bottom: 12pt; line-height: 120%;"> </p>

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ipal GmbH
Phone: +49 (0)30/2125-4820

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Dr. Dirk Dantz

info@technologieallianz.de | TechnologieAllianz e.V.
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