Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Silicon-Germanium Chip Sets New Speed Record

18.02.2014
A research collaboration consisting of IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology has demonstrated the world's fastest silicon-based device to date.

The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.

Although these operating speeds were achieved at extremely cold temperatures, the research suggests that record speeds at room temperature aren't far off, said professor John D. Cressler, who led the research for Georgia Tech. Information about the research was published in February of 2014, by IEEE Electron Device Letters.

"The transistor we tested was a conservative design, and the results indicate that there is significant potential to achieve similar speeds at room temperature – which would enable potentially world-changing progress in high-data-rate wireless and wired communications, as well as signal-processing, imaging, sensing and radar applications," said Cressler, who hold the Schlumberger Chair in electronics in the Georgia Tech School of Electrical and Computer Engineering. "Moreover, I believe that these results also indicate that the goal of breaking the so-called ‘terahertz barrier’ – meaning, achieving terahertz speeds in a robust and manufacturable silicon-germanium transistor -- is within reach."

Meanwhile, Cressler added, the tested transistor itself could be practical as is for certain cold-temperature applications. In particular, it could be used in its present form for demanding electronics applications in outer space, where temperatures can be extremely low.

IHP, a research center funded by the German government, designed and fabricated the device, a heterojunction bipolar transistor (HBT) made from a nanoscale SiGe alloy embedded within a silicon transistor. Cressler and his Georgia Tech team, including graduate students Partha S. Chakraborty, Adilson Cordoso and Brian R. Wier, performed the exacting work of analyzing, testing and evaluating the novel transistor.

“The record low temperature results show the potential for further increasing the transistor speed toward THz at room temperature. This could help enable applications of Si-based technologies in areas in which compound semiconductor technologies are dominant today. At IHP, B. Heinemann, H. Rücker, and A. Fox supported by the whole technology team working to develop the next THz transistor generation,” according to Bernd Tillack, who is leading the technology department at IHP in Frankfurt (Oder), Germany.

Silicon, a material used in the manufacture of most modern microchips, is not competitive with other materials when it comes to the extremely high performance levels needed for certain types of emerging wireless and wired communications, signal processing, radar and other applications. Certain highly specialized and costly materials – such as indium phosphide, gallium arsenide and gallium nitride – presently dominate these highly demanding application areas.

But silicon-germanium changes this situation. In SiGe technology, small amounts of germanium are introduced into silicon wafers at the atomic scale during the standard manufacturing process, boosting performance substantially.

The result is cutting-edge silicon-germanium devices such as the IHP Microelectronics 800 GHz transistor. Such designs combine SiGe's extremely high performance with silicon's traditional advantages -- low cost, high yield, smaller size and high levels of integration and manufacturability -- making silicon with added germanium highly competitive with the other materials.

Cressler and his team demonstrated the 800 GHz transistor speed at 4.3 Kelvins (452 degrees below zero, Fahrenheit). This transistor has a breakdown voltage of 1.7 V, a value which is adequate for most intended applications.

The 800 GHz transistor was manufactured using IHP’s 130-nanometer BiCMOS process, which has a cost advantage compared with today’s highly-scaled CMOS technologies. This 130 nm SiGe BiCMOS process is offered by IHP in a multi-project wafer foundry service.

The Georgia Tech team used liquid helium to achieve the extremely low cryogenic temperatures of 4.3 Kelvins in achieving the observed 798 GHz speeds. "When we tested the IHP 800 GHz transistor at room temperature during our evaluation, it operated at 417 GHz," Cressler said. "At that speed, it's already faster than 98 percent of all the transistors available right now."

Contacts:
Dr. Wolfgang Kissinger
IHP
Im Technologiepark 25
15236 Frankfurt (Oder)
Germany
Email: kissinger@ihp-microelectronics.com
John Toon
Georgia Institute of Technology
177 North Avenue
Atlanta, GA 30332-0181
USA
(404) 894-6986

Dr. Wolfgang Kissinger | idw
Further information:
http://www.ihp-microelectronics.com

More articles from Information Technology:

nachricht Information integration and artificial intelligence for better diagnosis and therapy decisions
24.05.2017 | Fraunhofer MEVIS - Institut für Bildgestützte Medizin

nachricht World's thinnest hologram paves path to new 3-D world
18.05.2017 | RMIT University

All articles from Information Technology >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Can the immune system be boosted against Staphylococcus aureus by delivery of messenger RNA?

Staphylococcus aureus is a feared pathogen (MRSA, multi-resistant S. aureus) due to frequent resistances against many antibiotics, especially in hospital infections. Researchers at the Paul-Ehrlich-Institut have identified immunological processes that prevent a successful immune response directed against the pathogenic agent. The delivery of bacterial proteins with RNA adjuvant or messenger RNA (mRNA) into immune cells allows the re-direction of the immune response towards an active defense against S. aureus. This could be of significant importance for the development of an effective vaccine. PLOS Pathogens has published these research results online on 25 May 2017.

Staphylococcus aureus (S. aureus) is a bacterium that colonizes by far more than half of the skin and the mucosa of adults, usually without causing infections....

Im Focus: A quantum walk of photons

Physicists from the University of Würzburg are capable of generating identical looking single light particles at the push of a button. Two new studies now demonstrate the potential this method holds.

The quantum computer has fuelled the imagination of scientists for decades: It is based on fundamentally different phenomena than a conventional computer....

Im Focus: Turmoil in sluggish electrons’ existence

An international team of physicists has monitored the scattering behaviour of electrons in a non-conducting material in real-time. Their insights could be beneficial for radiotherapy.

We can refer to electrons in non-conducting materials as ‘sluggish’. Typically, they remain fixed in a location, deep inside an atomic composite. It is hence...

Im Focus: Wafer-thin Magnetic Materials Developed for Future Quantum Technologies

Two-dimensional magnetic structures are regarded as a promising material for new types of data storage, since the magnetic properties of individual molecular building blocks can be investigated and modified. For the first time, researchers have now produced a wafer-thin ferrimagnet, in which molecules with different magnetic centers arrange themselves on a gold surface to form a checkerboard pattern. Scientists at the Swiss Nanoscience Institute at the University of Basel and the Paul Scherrer Institute published their findings in the journal Nature Communications.

Ferrimagnets are composed of two centers which are magnetized at different strengths and point in opposing directions. Two-dimensional, quasi-flat ferrimagnets...

Im Focus: World's thinnest hologram paves path to new 3-D world

Nano-hologram paves way for integration of 3-D holography into everyday electronics

An Australian-Chinese research team has created the world's thinnest hologram, paving the way towards the integration of 3D holography into everyday...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

Marine Conservation: IASS Contributes to UN Ocean Conference in New York on 5-9 June

24.05.2017 | Event News

AWK Aachen Machine Tool Colloquium 2017: Internet of Production for Agile Enterprises

23.05.2017 | Event News

Dortmund MST Conference presents Individualized Healthcare Solutions with micro and nanotechnology

22.05.2017 | Event News

 
Latest News

How herpesviruses win the footrace against the immune system

26.05.2017 | Life Sciences

Water forms 'spine of hydration' around DNA, group finds

26.05.2017 | Life Sciences

First Juno science results supported by University of Leicester's Jupiter 'forecast'

26.05.2017 | Physics and Astronomy

VideoLinks
B2B-VideoLinks
More VideoLinks >>>