Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Nanowire-bridging transistors open way to next-generation electronics

15.05.2014

A new approach to integrated circuits, combining atoms of semiconductor materials into nanowires and structures on top of silicon surfaces, shows promise for a new generation of fast, robust electronic and photonic devices.

Engineers at the University of California, Davis, have recently demonstrated three-dimensional nanowire transistors using this approach that open exciting opportunities for integrating other semiconductors, such as gallium nitride, on silicon substrates.


Nanowires grown on Silicon

Video (1 min 21 sec)

Videography by Andy Fell/UC Davis

"Silicon can't do everything," said Saif Islam, professor of electrical and computer engineering at UC Davis. Circuits built on conventionally etched silicon have reached their lower size limit, which restricts operation speed and integration density. Additionally, conventional silicon circuits cannot function at temperatures above 250 degrees Celsius (about 480 degrees Fahrenheit), or handle high power or voltages, or optical applications.

The new technology could be used, for example, to build sensors that can operate under high temperatures, for example inside aircraft engines.

"In the foreseeable future, society will be dependent on a variety of sensors and control systems that operate in extreme environments, such as motor vehicles, boats, airplanes, terrestrial oil and ore extraction, rockets, spacecraft, and bodily implants," Islam said.

Devices that include both silicon and nonsilicon materials offer higher speeds and more robust performance. Conventional microcircuits are formed from etched layers of silicon and insulators, but it's difficult to grow nonsilicon materials as layers over silicon because of incompatibilities in crystal structure (or "lattice mismatch") and differences in thermal properties.

Instead, Islam's laboratory at UC Davis has created silicon wafers with "nanopillars" of materials such as gallium arsenide, gallium nitride or indium phosphide on them, and grown tiny nanowire "bridges" between nanopillars.

"We can't grow films of these other materials on silicon, but we can grow them as nanowires," Islam said.

The researchers have been able to make these nanowires operate as transistors, and combine them into more complex circuits as well as devices that are responsive to light. They have developed techniques to control the number of nanowires, their physical characteristics and consistency.

Islam said the suspended structures have other advantages: They are easier to cool and handle thermal expansion better than planar structures — a relevant issue when mismatched materials are combined in a transistor.

The technology also leverages the well-established technology for manufacturing silicon integrated circuits, instead of having to create an entirely new route for manufacturing and distribution, Islam said.

The work is described in a series of recent papers in the journals Advanced Materials, Applied Physics Letters and IEEE Transactions on Nanotechnology with co-authors Jin Yong Oh at UC Davis; Jong-Tae Park, University of Incheon, South Korea; Hyun-June Jang and Won-Ju Cho, Kwangwoon University, South Korea. Funding was provided by the U.S. National Science Foundation and the government of South Korea.

About UC Davis

UC Davis is a global community of individuals united to better humanity and our natural world while seeking solutions to some of our most pressing challenges. Located near the California state capital, UC Davis has more than 34,000 students, and the full-time equivalent of 4,100 faculty and other academics and 17,400 staff. The campus has an annual research budget of over $750 million, a comprehensive health system and about two dozen specialized research centers. The university offers interdisciplinary graduate study and 99 undergraduate majors in four colleges and six professional schools.

Additional information:

Media contact(s):

Andy Fell | Eurek Alert!
Further information:
http://news.ucdavis.edu/search/news_detail.lasso?id=10929

More articles from Materials Sciences:

nachricht Spin glass physics with trapped ions
30.05.2016 | ICFO-The Institute of Photonic Sciences

nachricht 3-D model reveals how invisible waves move materials within aquatic ecosystems
30.05.2016 | University of Waterloo

All articles from Materials Sciences >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Worldwide Success of Tyrolean Wastewater Treatment Technology

A biological and energy-efficient process, developed and patented by the University of Innsbruck, converts nitrogen compounds in wastewater treatment facilities into harmless atmospheric nitrogen gas. This innovative technology is now being refined and marketed jointly with the United States’ DC Water and Sewer Authority (DC Water). The largest DEMON®-system in a wastewater treatment plant is currently being built in Washington, DC.

The DEMON®-system was developed and patented by the University of Innsbruck 11 years ago. Today this successful technology has been implemented in about 70...

Im Focus: Computational high-throughput screening finds hard magnets containing less rare earth elements

Permanent magnets are very important for technologies of the future like electromobility and renewable energy, and rare earth elements (REE) are necessary for their manufacture. The Fraunhofer Institute for Mechanics of Materials IWM in Freiburg, Germany, has now succeeded in identifying promising approaches and materials for new permanent magnets through use of an in-house simulation process based on high-throughput screening (HTS). The team was able to improve magnetic properties this way and at the same time replaced REE with elements that are less expensive and readily available. The results were published in the online technical journal “Scientific Reports”.

The starting point for IWM researchers Wolfgang Körner, Georg Krugel, and Christian Elsässer was a neodymium-iron-nitrogen compound based on a type of...

Im Focus: Atomic precision: technologies for the next-but-one generation of microchips

In the Beyond EUV project, the Fraunhofer Institutes for Laser Technology ILT in Aachen and for Applied Optics and Precision Engineering IOF in Jena are developing key technologies for the manufacture of a new generation of microchips using EUV radiation at a wavelength of 6.7 nm. The resulting structures are barely thicker than single atoms, and they make it possible to produce extremely integrated circuits for such items as wearables or mind-controlled prosthetic limbs.

In 1965 Gordon Moore formulated the law that came to be named after him, which states that the complexity of integrated circuits doubles every one to two...

Im Focus: Researchers demonstrate size quantization of Dirac fermions in graphene

Characterization of high-quality material reveals important details relevant to next generation nanoelectronic devices

Quantum mechanics is the field of physics governing the behavior of things on atomic scales, where things work very differently from our everyday world.

Im Focus: Graphene: A quantum of current

When current comes in discrete packages: Viennese scientists unravel the quantum properties of the carbon material graphene

In 2010 the Nobel Prize in physics was awarded for the discovery of the exceptional material graphene, which consists of a single layer of carbon atoms...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

Networking 4.0: International Laser Technology Congress AKL’16 Shows New Ways of Cooperations

24.05.2016 | Event News

Challenges of rural labor markets

20.05.2016 | Event News

International expert meeting “Health Business Connect” in France

19.05.2016 | Event News

 
Latest News

3-D model reveals how invisible waves move materials within aquatic ecosystems

30.05.2016 | Materials Sciences

Spin glass physics with trapped ions

30.05.2016 | Materials Sciences

Optatec 2016: Robust glass optical elements for LED lighting

30.05.2016 | Trade Fair News

VideoLinks
B2B-VideoLinks
More VideoLinks >>>