Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Joining up memory

23.01.2014
Innovative electrodes allow new computer memory technologies to be compatible with existing circuitry

The computing industry faces constant demands to provide faster access to data and reduce power consumption. As current memory systems cannot meet these demands indefinitely, it is essential to develop entirely new technologies.

One strong contender is resistive random access memory (RRAM), which stores binary information by switching a dielectric material between conducting and non-conducting states.

A seamless transition to this new technology requires that RRAM memory cells be compatible with existing electronics, which are usually based on complementary metal oxide semiconductors (CMOS). Now, Xin Peng Wang and co-workers at the A*STAR Institute of Microelectronics, Singapore, have designed nickel-based electrodes that can couple RRAM to CMOS systems as well as reduce the current required to switch the RRAM between memory states1.

“One of the current most dominant memory systems, NAND flash, is expected to reach the limit of its scalability in 2017 or 2018,” says Wang. “We need to identify emerging non-volatile memory systems with higher densities, to make up the market. Recently, RRAM has attracted lots of attention due to its fast programming and erasing speeds, high endurance and good retention of data.”

Preventing neighboring RRAM cells from interfering with one another requires each cell to contain a selector made from a diode or transistor. Diode selectors have proved difficult to implement, therefore Wang and co-workers aimed to make RRAM stacks that were compatible with CMOS transistors.

To build the prototype RRAM cells, the researchers used three layers. They used physical vapor deposition to create a bottom electrode of nickel silicide or nickel germanosilicide, before adding a central dielectric switching layer of hafnium oxide, and a final top electrode of titanium nitride.

The researchers found that they could quickly and reliably switch the memory state of their cells, using very low operating currents. They suggest that the switching is enhanced by oxidation and reduction of nickel at the interfacial layer between the electrode and the dielectric. By providing more mobile oxygen species, these reactions might accelerate the formation and rupture of conductive filaments.

“Our electrodes can be easily formed on the source or drain terminal of a transistor,” says Wang. “In fact, our design effectively uses a CMOS transistor source or drain directly as the bottom electrode in a RRAM cell. This can lower the total cost and improve the scalability.”

In future, Wang and co-workers hope to shrink their nickel-based RRAM cells to a practical circuit scale to bring this promising technology into production.

The A*STAR-affiliated researchers contributing to this research are from the Institute of Microelectronics

Journal information

Wang, X. P., Fang, Z., Chen, Z. X., Kamath, A. R., Tang, L. J. et al. Ni-containing electrodes for compact integration of resistive random access memory with CMOS. IEEE Electron Device Letters 34, 508–510 (2013).

A*STAR Research | Research asia research news
Further information:
http://www.a-star.edu.sg
http://www.researchsea.com

More articles from Information Technology:

nachricht Superfast fluorescence sets new speed record
27.07.2015 | Duke University

nachricht Two crystals are better than one
22.07.2015 | The Agency for Science, Technology and Research (A*STAR)

All articles from Information Technology >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Quantum Matter Stuck in Unrest

Using ultracold atoms trapped in light crystals, scientists from the MPQ, LMU, and the Weizmann Institute observe a novel state of matter that never thermalizes.

What happens if one mixes cold and hot water? After some initial dynamics, one is left with lukewarm water—the system has thermalized to a new thermal...

Im Focus: On the crest of the wave: Electronics on a time scale shorter than a cycle of light

Physicists from Regensburg and Marburg, Germany have succeeded in taking a slow-motion movie of speeding electrons in a solid driven by a strong light wave. In the process, they have unraveled a novel quantum phenomenon, which will be reported in the forthcoming edition of Nature.

The advent of ever faster electronics featuring clock rates up to the multiple-gigahertz range has revolutionized our day-to-day life. Researchers and...

Im Focus: Superfast fluorescence sets new speed record

Plasmonic device has speed and efficiency to serve optical computers

Researchers have developed an ultrafast light-emitting device that can flip on and off 90 billion times a second and could form the basis of optical computing.

Im Focus: Unlocking the rice immune system

Joint BioEnergy Institute study identifies bacterial protein that is key to protecting rice against bacterial blight

A bacterial signal that when recognized by rice plants enables the plants to resist a devastating blight disease has been identified by a multi-national team...

Im Focus: Smarter window materials can control light and energy

Researchers in the Cockrell School of Engineering at The University of Texas at Austin are one step closer to delivering smart windows with a new level of energy efficiency, engineering materials that allow windows to reveal light without transferring heat and, conversely, to block light while allowing heat transmission, as described in two new research papers.

By allowing indoor occupants to more precisely control the energy and sunlight passing through a window, the new materials could significantly reduce costs for...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

3rd Euro Bio-inspired - International Conference and Exhibition on Bio-inspired Materials

23.07.2015 | Event News

Clash of Realities – International Conference on the Art, Technology and Theory of Digital Games

10.07.2015 | Event News

World Conference on Regenerative Medicine in Leipzig: Last chance to submit abstracts until 2 July

25.06.2015 | Event News

 
Latest News

Tool making and additive technology exhibition: Fraunhofer IPT at Formnext

31.07.2015 | Trade Fair News

First Siemens-built Thameslink train arrives in London

31.07.2015 | Transportation and Logistics

California 'rain debt' equal to average full year of precipitation

31.07.2015 | Physics and Astronomy

VideoLinks
B2B-VideoLinks
More VideoLinks >>>