Dutch researcher Michiel Blauw has described the physical limitations of the plasma-etching of deep, narrow microstructures in silicon. His results have led to such an improvement in the etching process that trenches with a depth more than 30 times their width can now be made. This is important for the production of sensitive sensors.
Blauw investigated fluorine-based plasma etching processes. A plasma with a high ion-density burns a small hole in silicon. Many applications require narrow, deep holes. Blauw studied how the plasma reacts with the silicon and how the sidewalls must be treated so as to make the trench as deep and as straight as possible.
The researcher came up with two ways to improve the profile of the trenches in the so-called Bosch process. During this process, a polymer layer ensures that the sidewalls are not etched by the plasma. However, the thin polymer layer is also deposited onto the bottom of the trench and this hinders the etching of deep, narrow trenches.
Sonja Jacobs | NWO
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Researchers from the Institute for Quantum Computing (IQC) at the University of Waterloo led the development of a new extensible wiring technique capable of controlling superconducting quantum bits, representing a significant step towards to the realization of a scalable quantum computer.
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In a paper in Scientific Reports, a research team at Worcester Polytechnic Institute describes a novel light-activated phenomenon that could become the basis for applications as diverse as microscopic robotic grippers and more efficient solar cells.
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By forcefully embedding two silicon atoms in a diamond matrix, Sandia researchers have demonstrated for the first time on a single chip all the components needed to create a quantum bridge to link quantum computers together.
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COMPAMED has become the leading international marketplace for suppliers of medical manufacturing. The trade fair, which takes place every November and is co-located to MEDICA in Dusseldorf, has been steadily growing over the past years and shows that medical technology remains a rapidly growing market.
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'Ferroelectric' materials can switch between different states of electrical polarization in response to an external electric field. This flexibility means they show promise for many applications, for example in electronic devices and computer memory. Current ferroelectric materials are highly valued for their thermal and chemical stability and rapid electro-mechanical responses, but creating a material that is scalable down to the tiny sizes needed for technologies like silicon-based semiconductors (Si-based CMOS) has proven challenging.
Now, Hiroshi Funakubo and co-workers at the Tokyo Institute of Technology, in collaboration with researchers across Japan, have conducted experiments to...
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