Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Stress management: X-rays reveal Si thin-film defects

10.07.2006
Pile-ups, bad on the freeway, also are a hazard for the makers of high-performance strained-silicon (Si) semiconductor devices. A sensitive X-ray diffraction imaging technique developed by researchers at the National Institute of Standards and Technology (NIST) can help manufacturers avoid the latter--a bunching up of crystal defects caused by the manufacturing process for strained-silicon films.

Strained silicon is a new, rapidly developing material for building enhanced-performance silicon-based transistors. Introducing a slight tensile strain in the lattice of the silicon crystal dramatically improves the mobility of charges in the crystal, enabling faster, higher-performance devices. The strain is achieved by first growing a relatively thick crystalline layer of silicon-germanium (SiGe) on the normal silicon substrate wafer, and then growing a thin film of pure silicon on top. The difference in lattice spacing between pure silicon and SiGe creates the desired strain, but also creates occasional defects in the crystal that degrade performance. The problem is particularly bad when the defects cluster together in so-called "pile-ups."


X-ray topographs of three different strata of a strained-silicon wafer show close correspondence in defects from the base silicon layer (top) through the final strained-silicon layer (bottom). Color has been added for contrast, one particular defect area is highlighted. Credit: Courtesy National Institute of Standards and Technology

One of the best methods for studying crystal defects is to observe the image of X-rays diffracted from the crystal planes, a technique called X-ray topography. Until now, however, it's been impossible to study the interaction of defects in the multiple layers of these complex Si – SiGe – Si wafers. In a recent paper in Applied Physics Letters,* researchers from NIST and AmberWave Systems Corporation (Salem, N.H.) detail a high-resolution form of X-ray topography that can distinguish individual crystal defects layer by layer. The technique combines an extremely low-angle incident X-ray beam ("glancing incidence") to increase the signal from one layer over another and the use of highly monochromatic X-rays tuned to separate the contributions from each layer based on their different lattice spacings.

Their results show that crystal defects initially created at the interface between the silicon wafer and the SiGe layer become "templates" that propagate through that layer and create matching defects in the strained-silicon top layer. These defects, in turn, are notably persistent, remaining in the strained-silicon even through later processing that includes stripping the layer off, bonding it to an oxidized silicon wafer, and annealing it to create strained-silicon-on-insulator (SSOI) substrates.

Michael Baum | EurekAlert!
Further information:
http://www.nist.gov

More articles from Physics and Astronomy:

nachricht Pulses of electrons manipulate nanomagnets and store information
21.07.2017 | American Institute of Physics

nachricht Vortex photons from electrons in circular motion
21.07.2017 | National Institutes of Natural Sciences

All articles from Physics and Astronomy >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Manipulating Electron Spins Without Loss of Information

Physicists have developed a new technique that uses electrical voltages to control the electron spin on a chip. The newly-developed method provides protection from spin decay, meaning that the contained information can be maintained and transmitted over comparatively large distances, as has been demonstrated by a team from the University of Basel’s Department of Physics and the Swiss Nanoscience Institute. The results have been published in Physical Review X.

For several years, researchers have been trying to use the spin of an electron to store and transmit information. The spin of each electron is always coupled...

Im Focus: The proton precisely weighted

What is the mass of a proton? Scientists from Germany and Japan successfully did an important step towards the most exact knowledge of this fundamental constant. By means of precision measurements on a single proton, they could improve the precision by a factor of three and also correct the existing value.

To determine the mass of a single proton still more accurate – a group of physicists led by Klaus Blaum and Sven Sturm of the Max Planck Institute for Nuclear...

Im Focus: On the way to a biological alternative

A bacterial enzyme enables reactions that open up alternatives to key industrial chemical processes

The research team of Prof. Dr. Oliver Einsle at the University of Freiburg's Institute of Biochemistry has long been exploring the functioning of nitrogenase....

Im Focus: The 1 trillion tonne iceberg

Larsen C Ice Shelf rift finally breaks through

A one trillion tonne iceberg - one of the biggest ever recorded -- has calved away from the Larsen C Ice Shelf in Antarctica, after a rift in the ice,...

Im Focus: Laser-cooled ions contribute to better understanding of friction

Physics supports biology: Researchers from PTB have developed a model system to investigate friction phenomena with atomic precision

Friction: what you want from car brakes, otherwise rather a nuisance. In any case, it is useful to know as precisely as possible how friction phenomena arise –...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

Closing the Sustainability Circle: Protection of Food with Biobased Materials

21.07.2017 | Event News

»We are bringing Additive Manufacturing to SMEs«

19.07.2017 | Event News

The technology with a feel for feelings

12.07.2017 | Event News

 
Latest News

NASA looks to solar eclipse to help understand Earth's energy system

21.07.2017 | Earth Sciences

Stanford researchers develop a new type of soft, growing robot

21.07.2017 | Power and Electrical Engineering

Vortex photons from electrons in circular motion

21.07.2017 | Physics and Astronomy

VideoLinks
B2B-VideoLinks
More VideoLinks >>>