FinFETs are a promising approach to address short-channel effects and leakage issues when scaling CMOS towards the 32nm node and beyond. Doping fluctuations in nano-scale planar devices are one of the several concerns in further scaling, while FinFETs have the potential of being able to operate without channel dopants. IMEC has improved its process to yield reproducible FinFETs with fin widths down to 5nm and high aspect ratio using 193nm immersion lithography and dry etching. By using these ultra-thin body devices, the need of channel doping is eliminated. This results in reduced parametric spread due to dopant fluctuations together with reduced junction leakage.
Analyzing various circuit topologies, IMEC demonstrates experimentally that the performance of FinFET circuits is superior to bulk CMOS circuits and satisfies future digital library requirements. A ring oscillator has been realized with metal gates and un-doped fins showing an inverter delay of 13.9ps at a 1.0V supply voltage and 1.9nA off current. This best low-power performance of FinFETs ever reported results from the undoped channels and improved subthreshold characteristics. Next to the excellent inverter delay, FinFETs provide an extra performance benefit due to their excellent stacked device performance. They allow realizing higher stack heights whereby the same functionality can be implemented with less logic gates resulting in additional area reduction. The potential of FinFETs for large-scale integration has also been demonstrated. To this end, SRAM cells and data path demonstrators with low standby current and good low operating power performance were realized.
The reliability characteristics, both NBTI (negative bias temperature instability) and PBTI (positive bias temperature instability), of the FinFETs have been significantly improved by dielectric passivation based on introducing fluorine into the metal/Hf-based gate stack during gate etching. To this end, IMEC developed a novel, effective and cost-efficient method that requires no extra processing step.
“Although the performance benefits of FinFETs have been recognized for many years, several bottlenecks have to be overcome to bring FinFET technology to manufacturing. These advances have reduced the gap for FinFETs to become a manufacturing technology,” said Luc Van den hove, COO IMEC.
These results were obtained in collaboration with IMEC’s (sub-)32nm CMOS research partners: Infineon, Qimonda, Intel, Micron, NXP, Panasonic, Samsung, STMicroelectronics, Texas Instruments, TSMC and Elpida.
Katrien Marent | alfa
Powerful IT security for the car of the future – research alliance develops new approaches
25.05.2018 | Universität Ulm
Supercomputing the emergence of material behavior
18.05.2018 | University of Texas at Austin, Texas Advanced Computing Center
The more electronics steer, accelerate and brake cars, the more important it is to protect them against cyber-attacks. That is why 15 partners from industry and academia will work together over the next three years on new approaches to IT security in self-driving cars. The joint project goes by the name Security For Connected, Autonomous Cars (SecForCARs) and has funding of €7.2 million from the German Federal Ministry of Education and Research. Infineon is leading the project.
Vehicles already offer diverse communication interfaces and more and more automated functions, such as distance and lane-keeping assist systems. At the same...
A research team led by physicists at the Technical University of Munich (TUM) has developed molecular nanoswitches that can be toggled between two structurally different states using an applied voltage. They can serve as the basis for a pioneering class of devices that could replace silicon-based components with organic molecules.
The development of new electronic technologies drives the incessant reduction of functional component sizes. In the context of an international collaborative...
At the LASYS 2018, from June 5th to 7th, the Laser Zentrum Hannover e.V. (LZH) will be showcasing processes for the laser material processing of tomorrow in hall 4 at stand 4E75. With blown bomb shells the LZH will present first results of a research project on civil security.
At this year's LASYS, the LZH will exhibit light-based processes such as cutting, welding, ablation and structuring as well as additive manufacturing for...
There are videos on the internet that can make one marvel at technology. For example, a smartphone is casually bent around the arm or a thin-film display is rolled in all directions and with almost every diameter. From the user's point of view, this looks fantastic. From a professional point of view, however, the question arises: Is that already possible?
At Display Week 2018, scientists from the Fraunhofer Institute for Applied Polymer Research IAP will be demonstrating today’s technological possibilities and...
So-called quantum many-body scars allow quantum systems to stay out of equilibrium much longer, explaining experiment | Study published in Nature Physics
Recently, researchers from Harvard and MIT succeeded in trapping a record 53 atoms and individually controlling their quantum state, realizing what is called a...
25.05.2018 | Event News
02.05.2018 | Event News
13.04.2018 | Event News
25.05.2018 | Event News
25.05.2018 | Machine Engineering
25.05.2018 | Life Sciences