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GaN Gunn Diode: High Power Microwave Signal Innovation

The new vertical GaN-based Gunn device is made on GaN substrate and able to generate high power microwave signals. By developing special contacting, means of a stable NDR (Negative Differential Resistivity) region could be achieved. Thereby, electrical fields which are considerably higher than the threshold value can be applied without electromigration effects from the contacts.

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INNOVECTIS Gesellschaft für Innovations-Dienstleistungen mbH
Phone: +49 (0)69/798-49721

Contact
Dr. Otmar Schöller

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