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Boost MOS Power Amplifiers With HiVP-CMOS Innovation

A novel arrangement, namely cascading with “resistive diode boosting”, makes it possible to increase the output voltage of MOS power amplifiers. The invention limits the break down voltage by means of a limiting path between gate and drain. This path has a defined resistance and can be switched on or off. Additionally, it is possible to adopt a parallel configuration for high current applications

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Technologie-Lizenz-Büro (TLB) der Baden-Württembergischen Hochschulen GmbH
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