Technology Offerings

New Semiconductor Laser Component Enhances Performance

The invention concerns a semiconductor laser component that has inner boundary layers made of two different mixed crystal systems whose band distances are smaller than those of the outer boundary layers.

The reduction of leakage currents becomes more effective. It finally improves the efficiency and reduces the threshold current-dense and its temperature dependence.

Further Information: PDF

PVA Mecklenburg-Vorpommern AG
Phone: +49 (0)381/49 74 74 0

Contact
Moritz v. Grotthuss, Dr. Rüdiger Werp

Comments (0)

Write a comment