Manufacturing with the World’s Largest DRAM Production
Facility Inotera Memories, Inc., a joint venture of Infineon Technologies AG and Nanya Technology Corporation, announces the inauguration of its 300mm semiconductor production facility today. Inotera will produce memory products at the world’s largest and most competitive 300mm DRAM production site with a total capacity of more than 50,000 wafer starts per month when fully operational. The first DRAM chips using 110nm trench technology are already rolling off the new production site located at HwaYa Technology Park, Taiwan. Inotera’s major production volume of memory products will contribute to Infineon Technologies and Nanya Technology Corporation and help each partner to expand its position in the DRAM market.
“We are very proud of having finished construction and started the ramp up within a record time of only 18 months,” said Charles Kau, President of Inotera Memories. “Inotera combines Nanya’s expertise in mass production and efficient cost reduction capability with Infineon’s world class technology in 300mm production. We are dedicated to the continuous development of state-of-the-art manufacturing technologies and processes, and are committed to the manufacturing of high quality products at low cost with a high degree of flexibility.”
Research on light-matter interaction could improve electronic and optoelectronic devices
11.10.2018 | Rensselaer Polytechnic Institute
Unique Deep Learning Infrastructure - DFKI receives first NVIDIA DGX-2 supercomputer in Europe
11.10.2018 | Deutsches Forschungszentrum für Künstliche Intelligenz GmbH, DFKI
Scientists at the Max Planck Institute for Polymer Research (MPI-P) in Mainz (Germany) together with scientists from Dresden, Leipzig, Sofia (Bulgaria) and Madrid (Spain) have now developed and characterized a novel, metal-organic material which displays electrical properties mimicking those of highly crystalline silicon. The material which can easily be fabricated at room temperature could serve as a replacement for expensive conventional inorganic materials used in optoelectronics.
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