Oberflächenemittierender Halbleiter
The invention concerns a procedure for the treatment of surfaceemitting semiconductor components such as laser diodes. An upper layer stable against atmospheric effects is deposited as an etch resist layer and protects the high aluminum mirror layers below.
The efficiency and life-span of the semiconductor component will be increased. Therefore energy conservation is reached. There is no need for additional temperature stabilization. The InGaP layer can be inserted in all surface emitters, in top and in bottom emitters (substrate emitters).
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