New Magnetic RAM Cell Design and Method for Stable and Fast Writing
The novel magnetic ram design and switching method guarantee a much higher stability against unwanted dipolar interaction between neighbouring MRAM cells than conventional cells. A 3D analysis of the switching and the stability of the magnetization by micromagnetic simulations show stable switching rates up to 1.4 GHz for pulses shaped according to CMOS specifications. Furthermore, the method allows successive writings of a memory cell without time delay due to a pre-read of the bit configuration. Finally, two different wiring schemes are proposed: one involving the application of a bipolar field pulse; the other based on the application of unipolar field pulses.
Further Information: PDF
INNOVECTIS Gesellschaft für Innovations-Dienstleistungen mbH
Phone: +49 (0)69/2561632-0
Contact
Dr. Otmar Schöller
Media Contact
All latest news from the category: Technology Offerings
Newest articles
Sea slugs inspire highly stretchable biomedical sensor
USC Viterbi School of Engineering researcher Hangbo Zhao presents findings on highly stretchable and customizable microneedles for application in fields including neuroscience, tissue engineering, and wearable bioelectronics. The revolution in…
Twisting and binding matter waves with photons in a cavity
Precisely measuring the energy states of individual atoms has been a historical challenge for physicists due to atomic recoil. When an atom interacts with a photon, the atom “recoils” in…
Nanotubes, nanoparticles, and antibodies detect tiny amounts of fentanyl
New sensor is six orders of magnitude more sensitive than the next best thing. A research team at Pitt led by Alexander Star, a chemistry professor in the Kenneth P. Dietrich…
