The invention describes a highly sensitive semiconductor heterostructure for the detection of electromagnetic waves. The prototype works at room temperature in the range of 400nm 4 µm. Expanding the detection range to lower wavelengths, e.g. in the soft x-ray range, should also be possible. The sensor is sensitive enough to detect single photons with a count rate of a few hundred MHz. The active area has a diameter of only 100 nm to a few µm.
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