Silicon Carbide on Silicon
The presented invention allows the integration of silicon carbide (SiC) devices and silicon electronics on one chip. It presents a method to generate well defined SiC surfaces on silicon wafers that do not show the disadvantages generally attributed with the epitaxy of SiC on silicon (like warpage, the uncontrolled growth of different polytypes or interfacial cavities).
Further Information: PDF
Bayerische Patentallianz GmbH
Phone: +49 89 5480177-0
Contact
Peer Biskup
Media Contact
All latest news from the category: Technology Offerings
Newest articles
Superradiant atoms could push the boundaries of how precisely time can be measured
Superradiant atoms can help us measure time more precisely than ever. In a new study, researchers from the University of Copenhagen present a new method for measuring the time interval,…
Ion thermoelectric conversion devices for near room temperature
The electrode sheet of the thermoelectric device consists of ionic hydrogel, which is sandwiched between the electrodes to form, and the Prussian blue on the electrode undergoes a redox reaction…
Zap Energy achieves 37-million-degree temperatures in a compact device
New publication reports record electron temperatures for a small-scale, sheared-flow-stabilized Z-pinch fusion device. In the nine decades since humans first produced fusion reactions, only a few fusion technologies have demonstrated…