GaN Gunn Diode for High Frequency and High Power Signal Generation
The new vertical GaN-based Gunn device is made on GaN substrate and able to generate high power microwave signals. By developing special contacting, means of a stable NDR (Negative Differential Resistivity) region could be achieved. Thereby, electrical fields which are considerably higher than the threshold value can be applied without electromigration effects from the contacts.
Further Information: PDF
INNOVECTIS Gesellschaft für Innovations-Dienstleistungen mbH
Phone: +49 (0)69/798-49721
Contact
Dr. Otmar Schöller
Media Contact
All latest news from the category: Technology Offerings
Newest articles
Silicon Carbide Innovation Alliance to drive industrial-scale semiconductor work
Known for its ability to withstand extreme environments and high voltages, silicon carbide (SiC) is a semiconducting material made up of silicon and carbon atoms arranged into crystals that is…
New SPECT/CT technique shows impressive biomarker identification
…offers increased access for prostate cancer patients. A novel SPECT/CT acquisition method can accurately detect radiopharmaceutical biodistribution in a convenient manner for prostate cancer patients, opening the door for more…
How 3D printers can give robots a soft touch
Soft skin coverings and touch sensors have emerged as a promising feature for robots that are both safer and more intuitive for human interaction, but they are expensive and difficult…