Open FET Sensor – Extremely low leakage current Open-Gate Junction FET Electrometer

The Open FET sensor is a field-effect-based sensor in which the gate electrode is connected only to the signal to be measured and not as usual to other electronic components. It offers the possibility to measure small voltages at extremely high impedance. It is robust and versatile. For example, it can be used in scanning force and scanning tunneling microscopy or as an electrometer. Due to the simple construction, which does not require any further electronic circuitry, it is inexpensive and simple to manufacture. A German patent application was filed, international applications are still possible.
On behalf of the University of Duisburg-Essen, we offer interested companies the opportunity to license and further develop the technology.

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