Self-monitoring of Breakdown in Integrated Semiconductor Devices
The breakdown monitoring which is the object of this invention is achieved in real time by means of a photo diode which is integrated in the semiconductor device. During a breakdown, a p-n junction always emits light. It is this light emission that is recorded by the photo diode which is integrated in close proximity of the junction. In response to the strength of the light emission, one can then adjust the voltage or current that is applied to, resp. passes through the junction. Advantages: increased power of transistors, e.g. in oscillator circuits (radar, etc), increased reliability of ICs, increased operating range, protection from destruction.
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