Gunn diode on GaN substrate for the generation of high frequency signals with high power
The invention refers to GaN Gunn diodes which were produced on a GaN substrate and are suitable for generating millimetre waves with very high power. Due to one particular embodiment and arrangement of the contacts, it was possible to generate stable current voltage curves with a well marked negative differential resistance using these novel components. Thereby, significantly higher field strengths than the threshold field strength can be used.
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