Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Electronics: Magnetic memories on the right track

28.08.2014

An investigation into switching characteristics provides new criteria for achieving faster switching of magnetic memories.

Computer hard drives store data by writing magnetic information onto their surfaces. In the future, magnetic effects may also be used to improve active memory in computers, potentially eliminating the need to ‘boot up’ a computer. One way to achieve this is through a memory technology known as STT-MRAM that utilizes information stored in a pair of thin magnetic layers.


Pathways for the switching of a magnetic layer in an STT-MRAM device depend on the relative alignment of the two layers in the device.

Copyright : 2014 A*STAR Institute of High Performance Computing

By performing calculations, Chee Kwan Gan and colleagues from the A*STAR Institute of High Performance Computing have proposed ways to improve STT-MRAM memory through identifying design options for achieving faster switching speeds, and hence faster data write times [1].

In STT-MRAM devices, the relative orientation of the magnetic fields in the two thin layers determines the electrical resistance experienced by a current flowing through the device. If the magnetizations of both layers are aligned in the same direction, then the electrical resistance will be lower than when the layers have different magnetic alignments.

Switching the device between different magnetic states — which corresponds to writing information into the memory — is achieved by electrons whose magnetic property, the spin, is aligned in one direction. Collectively, these electrons are able to change the direction of the magnetization in one of the layers. The time it takes to switch the magnetic direction depends on several factors, including the initial relative orientation of the magnetic fields in the two layers. The magnetization of the switched layer can follow various complex paths during the switching process (see image).

In previous experiments, the switching process was found to depend on two parameters. Using their computational model, the researchers could focus on one parameter — the less-studied ‘field-like’ term — that accounts for the relative orientation of the magnetic fields in both layers. The strength of this term depends on various factors, such as the device geometry and the materials used.

The calculations by the researchers show that, for devices with a strong field-like term, there is greater potential to reduce switching times than for devices in which the field-like term is negligible. Gan explains that this discovery will assist the development of improved STT-MRAM devices. “Our findings will motivate experimentalists to fabricate devices with strong field-like terms,” says Gan.

Furthermore, a better understanding of the origin of the field-like term is needed, adds Gan. “Although the effect of the field-like term has been confirmed experimentally and investigated in this work through simulations, it is important to understand its physical origins in order to improve material design.”

Reference

1. Tiwari, R. K., Jhon, M. H., Ng, N., Srolovitz, D. J. & Gan, C. K. Current-induced switching of magnetic tunnel junctions: Effects of field-like spin-transfer torque, pinned-layer magnetization orientation, and temperature. Applied Physics Letters 104, 022413 (2014).

Lee Swee Heng | Research SEA News
Further information:
http://www.research.a-star.edu.sg/research/7024
http://www.researchsea.com

Further reports about: A*STAR Electronics Magnetic Science electrons factors layers magnetization materials memories orientation resistance

More articles from Physics and Astronomy:

nachricht Tangled magnetic fields power cosmic particle accelerators
14.12.2018 | DOE/SLAC National Accelerator Laboratory

nachricht In search of missing worlds, Hubble finds a fast evaporating exoplanet
14.12.2018 | NASA/Goddard Space Flight Center

All articles from Physics and Astronomy >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Data use draining your battery? Tiny device to speed up memory while also saving power

The more objects we make "smart," from watches to entire buildings, the greater the need for these devices to store and retrieve massive amounts of data quickly without consuming too much power.

Millions of new memory cells could be part of a computer chip and provide that speed and energy savings, thanks to the discovery of a previously unobserved...

Im Focus: An energy-efficient way to stay warm: Sew high-tech heating patches to your clothes

Personal patches could reduce energy waste in buildings, Rutgers-led study says

What if, instead of turning up the thermostat, you could warm up with high-tech, flexible patches sewn into your clothes - while significantly reducing your...

Im Focus: Lethal combination: Drug cocktail turns off the juice to cancer cells

A widely used diabetes medication combined with an antihypertensive drug specifically inhibits tumor growth – this was discovered by researchers from the University of Basel’s Biozentrum two years ago. In a follow-up study, recently published in “Cell Reports”, the scientists report that this drug cocktail induces cancer cell death by switching off their energy supply.

The widely used anti-diabetes drug metformin not only reduces blood sugar but also has an anti-cancer effect. However, the metformin dose commonly used in the...

Im Focus: New Foldable Drone Flies through Narrow Holes in Rescue Missions

A research team from the University of Zurich has developed a new drone that can retract its propeller arms in flight and make itself small to fit through narrow gaps and holes. This is particularly useful when searching for victims of natural disasters.

Inspecting a damaged building after an earthquake or during a fire is exactly the kind of job that human rescuers would like drones to do for them. A flying...

Im Focus: Topological material switched off and on for the first time

Key advance for future topological transistors

Over the last decade, there has been much excitement about the discovery, recognised by the Nobel Prize in Physics only two years ago, that there are two types...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

VideoLinks
Industry & Economy
Event News

ICTM Conference 2019: Digitization emerges as an engineering trend for turbomachinery construction

12.12.2018 | Event News

New Plastics Economy Investor Forum - Meeting Point for Innovations

10.12.2018 | Event News

EGU 2019 meeting: Media registration now open

06.12.2018 | Event News

 
Latest News

Data use draining your battery? Tiny device to speed up memory while also saving power

14.12.2018 | Power and Electrical Engineering

Tangled magnetic fields power cosmic particle accelerators

14.12.2018 | Physics and Astronomy

In search of missing worlds, Hubble finds a fast evaporating exoplanet

14.12.2018 | Physics and Astronomy

VideoLinks
Science & Research
Overview of more VideoLinks >>>