This is a major breakthrough, as previous devices that used magnetic semiconductors (GaMnAs) and controlled electron spin were only functional at 100 K (or -173 Celsius).
By controlling the spin of electrons, the new device represents a significant advance in semiconductor efficiency and speed.
The new device is also an advance on earlier experimental models because it uses only 5-6 volts to switch the bias of the electrons. Previous cold-temperature devices used much higher voltage.
The research was published April 2 in Applied Physics Letters.The paper can be found at http://tinyurl.com/d55kmw.
The research team included NC State professors S.M. Bedair and Nadia El-Masry; adjunct professor J.M. Zavada; post-doctoral research fellow N. Nepal; and graduate students Oliver Luen and P. Frajtag. The research was supported by the U.S. Army Research Office.
First diode for magnetic fields
21.11.2018 | Universität Innsbruck
When AI and optoelectronics meet: Researchers take control of light properties
20.11.2018 | Institut national de la recherche scientifique - INRS
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Faster and secure data communication: This is the goal of a new joint project involving physicists from the University of Würzburg. The German Federal Ministry of Education and Research funds the project with 14.8 million euro.
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On Saturday, 10 November 2018, the research icebreaker Polarstern will leave its homeport of Bremerhaven, bound for Cape Town, South Africa.
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20.11.2018 | Life Sciences