Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Illinois researchers create world’s fastest transistor -- again

10.11.2003


Researchers at the University of Illinois at Urbana-Champaign have broken their own record for the world’s fastest transistor. Their latest device, with a frequency of 509 gigahertz, is 57 gigahertz faster than their previous record holder and could find use in applications such as high-speed communications products, consumer electronics and electronic combat systems.




"The steady rise in the speed of bipolar transistors has relied largely on the vertical scaling of the epitaxial layer structure to reduce the carrier transit time," said Milton Feng, the Holonyak Professor of Electrical and Computer Engineering at Illinois, whose team has been working on high-speed compound semiconductor transistors since 1995. "However, this comes at the cost of increasing the base-collector capacitance. To compensate for this unwanted effect, we have employed lateral scaling of both the emitter and the collector."

Feng and graduate students Walid Hafez and Jie-Wei Lai fabricated the high-speed devices in the university’s Micro and Nanotechnology Laboratory. Unlike traditional transistors, which are built from silicon and germanium, the Illinois transistors are made from indium phosphide and indium gallium arsenide.


"This material system is inherently faster than silicon germanium, and can support a much higher current density," Feng said. "By making the components smaller, the transistor can charge and discharge more quickly, creating a significant improvement in speed."

During the past year, high-speed transistor records have fallen like dominoes on the Illinois campus. In January, Feng’s group announced a transistor with a 150-nanometer collector and a top frequency of 382 gigahertz. In May, the group reported a 452-gigahertz device with a 25-nanometer base and a 100-nanometer collector. Further scaling reduced the collector size to 75 nanometers, resulting in a 509-gigahertz device, announced last month.

In addition to using a high-speed material system and smaller device components, another technique the researchers employed to boost transistor speed utilized a narrow metal bridge to separate the base terminal from the device connector post.

"Normally in transistors the contact size is bigger than the transistor itself," Feng said. "Our micro-bridge eliminates the parasitic base to collector capacitance that is inherent with designs that use large base contact posts. By isolating the base, we can achieve higher current density and faster device operation."

Faster transistors would enable the creation of faster computers and video games, more flexible and secure wireless communications systems, and more rapid analog-to-digital conversion for use in radar and other electronic combat systems.

"Further vertical scaling of the epitaxial structure, combined with lateral device scaling, should allow devices with even higher frequencies," Feng said. "Our ultimate goal is to make a terahertz transistor."

James E. Kloeppel | UIUC
Further information:
http://www.uiuc.edu/
http://www.news.uiuc.edu/scitips/03/1106feng.html

More articles from Power and Electrical Engineering:

nachricht New graphene-based metasurface capable of independent amplitude and phase control of light
20.02.2020 | The Korea Advanced Institute of Science and Technology (KAIST)

nachricht A step towards controlling spin-dependent petahertz electronics by material defects
19.02.2020 | Max-Planck-Institut für Struktur und Dynamik der Materie

All articles from Power and Electrical Engineering >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: A step towards controlling spin-dependent petahertz electronics by material defects

The operational speed of semiconductors in various electronic and optoelectronic devices is limited to several gigahertz (a billion oscillations per second). This constrains the upper limit of the operational speed of computing. Now researchers from the Max Planck Institute for the Structure and Dynamics of Matter in Hamburg, Germany, and the Indian Institute of Technology in Bombay have explained how these processes can be sped up through the use of light waves and defected solid materials.

Light waves perform several hundred trillion oscillations per second. Hence, it is natural to envision employing light oscillations to drive the electronic...

Im Focus: Freiburg researcher investigate the origins of surface texture

Most natural and artificial surfaces are rough: metals and even glasses that appear smooth to the naked eye can look like jagged mountain ranges under the microscope. There is currently no uniform theory about the origin of this roughness despite it being observed on all scales, from the atomic to the tectonic. Scientists suspect that the rough surface is formed by irreversible plastic deformation that occurs in many processes of mechanical machining of components such as milling.

Prof. Dr. Lars Pastewka from the Simulation group at the Department of Microsystems Engineering at the University of Freiburg and his team have simulated such...

Im Focus: Skyrmions like it hot: Spin structures are controllable even at high temperatures

Investigation of the temperature dependence of the skyrmion Hall effect reveals further insights into possible new data storage devices

The joint research project of Johannes Gutenberg University Mainz (JGU) and the Massachusetts Institute of Technology (MIT) that had previously demonstrated...

Im Focus: Making the internet more energy efficient through systemic optimization

Researchers at Chalmers University of Technology, Sweden, recently completed a 5-year research project looking at how to make fibre optic communications systems more energy efficient. Among their proposals are smart, error-correcting data chip circuits, which they refined to be 10 times less energy consumptive. The project has yielded several scientific articles, in publications including Nature Communications.

Streaming films and music, scrolling through social media, and using cloud-based storage services are everyday activities now.

Im Focus: New synthesis methods enhance 3D chemical space for drug discovery

After helping develop a new approach for organic synthesis -- carbon-hydrogen functionalization -- scientists at Emory University are now showing how this approach may apply to drug discovery. Nature Catalysis published their most recent work -- a streamlined process for making a three-dimensional scaffold of keen interest to the pharmaceutical industry.

"Our tools open up whole new chemical space for potential drug targets," says Huw Davies, Emory professor of organic chemistry and senior author of the paper.

All Focus news of the innovation-report >>>

Anzeige

Anzeige

VideoLinks
Industry & Economy
Event News

70th Lindau Nobel Laureate Meeting: Around 70 Laureates set to meet with young scientists from approx. 100 countries

12.02.2020 | Event News

11th Advanced Battery Power Conference, March 24-25, 2020 in Münster/Germany

16.01.2020 | Event News

Laser Colloquium Hydrogen LKH2: fast and reliable fuel cell manufacturing

15.01.2020 | Event News

 
Latest News

Active droplets

21.02.2020 | Medical Engineering

Finding new clues to brain cancer treatment

21.02.2020 | Health and Medicine

Beyond the brim, Sombrero Galaxy's halo suggests turbulent past

21.02.2020 | Physics and Astronomy

VideoLinks
Science & Research
Overview of more VideoLinks >>>