IMEC and AIXTRON deposited, for the first time ever, crack-free AlGaN/GaN structures onto 200mm Si(111) wafers. The layers show good crystalline quality as measured by high-resolution x-ray diffraction (HR-XRD). Excellent morphology and uniformity were obtained as well. The high-quality AlGaN and GaN layers were grown in AIXTRON’s application laboratory on the 300mm CRIUS metal-organic chemical-vapor-phase epitaxy (MOVPE) reactor.
“The demonstration of GaN growth on 200mm Si wafers is an important step towards processing GaN devices on large Si wafers”, said Marianne Germain, Program Manager of IMEC’s Efficient Power program. “There is a strong demand for GaN-based solid-state switching devices in the field of power conversion. However, bringing GaN devices to a level acceptable for most applications requires a drastic reduction in the cost of this technology. And that is only possible by processing on large-diameter Si wafers. 150mm, and then 200mm are the minimum wafer sizes we need to fully leverage today’s silicon processing capabilities.” The bow of the resulting wafers is still quite large, in the range of 100µm; but IMEC believes that an optimized buffer can reduce this bow drastically, enabling further processing. Marianne Germain: “We aim to further develop the growth process and to qualify the wafers to be compatible with Si-CMOS process.”
Gallium nitride (GaN) has outstanding capabilities for power, low-noise, high-frequency, high-temperature operations, even in harsh environment (radiation); it considerably extends the application field of solid-state devices. Due to the lack of commercially available GaN substrates, GaN heterostructures are nowadays grown mainly on sapphire and silicon carbide (SiC). Si is a very attractive alternative, being much cheaper than sapphire and SiC. Other benefits include the acceptable thermal conductivity of Si (half of that of SiC) and its availability in large quantities and large wafer sizes. But until now, Si wafers with (111) surface orientation were only available with a diameter up to 150mm. The 200mm wafers were custom-made by MEMC Electronic Materials, Inc. using the Czochralski growth (CZ) method. CZ wafers are ideally suited for switching applications with large breakdown voltages. For such devices, the performance is independent of the resistivity of the Si substrate.
Process detailsFor the AlGaN/GaN heterostructures, a standard layer stack, that had already been successfully demonstrated on 100 and 150mm Si(111) substrates, was used.
First an AlN layer was deposited onto the Si substrate, followed by an AlGaN buffer which provides compressive stress in the 1 micron thick GaN top layer. The stack was finished with a 20nm thin AlGaN (26% Al) layer and capped with a 2nm GaN layer. From in-situ measurements, researchers from IMEC were able to extract the thickness uniformity of the different layers which show a standard deviation well below 1% over the full 200mm wafers (5mm EE).
Battery research at Graz University of Technology: new breakthroughs in research on super-batteries
25.04.2019 | Technische Universität Graz
Energy-saving new LED phosphor
24.04.2019 | Universität Innsbruck
For the first time, physicists at the University of Basel have succeeded in measuring the magnetic properties of atomically thin van der Waals materials on the nanoscale. They used diamond quantum sensors to determine the strength of the magnetization of individual atomic layers of the material chromium triiodide. In addition, they found a long-sought explanation for the unusual magnetic properties of the material. The journal Science has published the findings.
The use of atomically thin, two-dimensional van der Waals materials promises innovations in numerous fields in science and technology. Scientists around the...
Flexible, organic and printed electronics conquer everyday life. The forecasts for growth promise increasing markets and opportunities for the industry. In Europe, top institutions and companies are engaged in research and further development of these technologies for tomorrow's markets and applications. However, access by SMEs is difficult. The European project SmartEEs - Smart Emerging Electronics Servicing works on the establishment of a European innovation network, which supports both the access to competences as well as the support of the enterprises with the assumption of innovations and the progress up to the commercialization.
It surrounds us and almost unconsciously accompanies us through everyday life - printed electronics. It starts with smart labels or RFID tags in clothing, we...
The human eye is particularly sensitive to green, but less sensitive to blue and red. Chemists led by Hubert Huppertz at the University of Innsbruck have now developed a new red phosphor whose light is well perceived by the eye. This increases the light yield of white LEDs by around one sixth, which can significantly improve the energy efficiency of lighting systems.
Light emitting diodes or LEDs are only able to produce light of a certain colour. However, white light can be created using different colour mixing processes.
Researchers led by Francesca Ferlaino from the University of Innsbruck and the Austrian Academy of Sciences report in Physical Review X on the observation of supersolid behavior in dipolar quantum gases of erbium and dysprosium. In the dysprosium gas these properties are unprecedentedly long-lived. This sets the stage for future investigations into the nature of this exotic phase of matter.
Supersolidity is a paradoxical state where the matter is both crystallized and superfluid. Predicted 50 years ago, such a counter-intuitive phase, featuring...
A stellar flare 10 times more powerful than anything seen on our sun has burst from an ultracool star almost the same size as Jupiter
17.04.2019 | Event News
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26.04.2019 | Physics and Astronomy
26.04.2019 | Physics and Astronomy