Huang, who comes from humble roots as the son of farmers in rural China, has invented a new transistor that uses a compound material known as gallium nitride (GaN), which has remarkable material properties. The new GaN transistor could reduce the power consumption and improve the efficiency of power electronics systems in everything from motor drives and hybrid vehicles to house appliances and defense equipment.
“Silicon has been the workhorse in the semiconductor industry for last two decades,” Huang said. “But as power electronics get more sophisticated and require higher performing transistors, engineers have been seeking an alternative like gallium nitride-based transistors that can perform better than silicon and in extreme conditions.”
Each household likely contains dozens of silicon-based electronics. An important component of each of those electronics is usually a silicon-based transistor know as a silicon metal/oxide semiconductor field-effect transistor (silicon MOSFET). To convert the electric energy to other forms as required, the transistor acts as a switch, allowing or disallowing the flow of current through the device.
Huang first developed a new process that demonstrates an excellent GaN MOS (metal/oxide/GaN) interface. Engineers have known that GaN and other gallium-based materials have some extremely good electrical properties, much better than silicon. However, no useful GaN MOS transistor has been developed. Huang’s innovation, the first GaN MOSFET of its kind in the world, has already shown world-record performance according to Huang. In addition, Huang has shown that his innovation can integrate several important electronic functions onto one chip like never before. “This will significantly simplify entire electronic systems,” Huang said. Huang has also designed and experimentally demonstrated several new novel high-voltage MOS-gated FETs which have shown superior performance compared to silicon MOSFET in terms of lower power consumption, smaller chip size, and higher power density.
The new transistors can greatly reduce energy loss, making energy conversion more efficient. “If these new GaN transistors replaced many existing silicon MOSFETs in power electronics systems, there would be global reduction in fossil fuel consumption and pollution,” Huang said.
The new GaN transistors can also allow the electronics system to operate in extremely hot, harsh, and high-power environments and even those that produce radiation. “Because it is so resilient, the device could open up the field of electronic engineering in ways that were not previously possible due to the limitations imposed by less tolerant silicon transistors,” he said.
Huang has published more than 15 papers during his time as doctoral student in the Department of Electrical, Computer, and Systems Engineering at Rensselaer. Despite obvious difficulties, his parents worked tirelessly to give Huang the best possible educational opportunities according to Huang. And when school wasn’t enough, Huang’s father woke him up early every morning to practice mathematical calculations without a calculator, instilling in Huang a lifelong appreciation for basic, theoretical mathematics and sciences.
He received a bachelor’s in electronics from Peking University in Beijing in 2001 and a master’s in physics from Rensselaer in 2003. He will receive his doctorate from Rensselaer on May 17, 2008 and plans to work as a device engineer in the semiconductor industry.About Rensselaer
Gabrielle DeMarco | newswise
A smart safe rechargeable zinc ion battery based on sol-gel transition electrolytes
20.07.2018 | Science China Press
Future electronic components to be printed like newspapers
20.07.2018 | Purdue University
A new manufacturing technique uses a process similar to newspaper printing to form smoother and more flexible metals for making ultrafast electronic devices.
The low-cost process, developed by Purdue University researchers, combines tools already used in industry for manufacturing metals on a large scale, but uses...
For the first time ever, scientists have determined the cosmic origin of highest-energy neutrinos. A research group led by IceCube scientist Elisa Resconi, spokesperson of the Collaborative Research Center SFB1258 at the Technical University of Munich (TUM), provides an important piece of evidence that the particles detected by the IceCube neutrino telescope at the South Pole originate from a galaxy four billion light-years away from Earth.
To rule out other origins with certainty, the team led by neutrino physicist Elisa Resconi from the Technical University of Munich and multi-wavelength...
For the first time a team of researchers have discovered two different phases of magnetic skyrmions in a single material. Physicists of the Technical Universities of Munich and Dresden and the University of Cologne can now better study and understand the properties of these magnetic structures, which are important for both basic research and applications.
Whirlpools are an everyday experience in a bath tub: When the water is drained a circular vortex is formed. Typically, such whirls are rather stable. Similar...
Physicists working with Roland Wester at the University of Innsbruck have investigated if and how chemical reactions can be influenced by targeted vibrational excitation of the reactants. They were able to demonstrate that excitation with a laser beam does not affect the efficiency of a chemical exchange reaction and that the excited molecular group acts only as a spectator in the reaction.
A frequently used reaction in organic chemistry is nucleophilic substitution. It plays, for example, an important role in in the synthesis of new chemical...
Optical spectroscopy allows investigating the energy structure and dynamic properties of complex quantum systems. Researchers from the University of Würzburg present two new approaches of coherent two-dimensional spectroscopy.
"Put an excitation into the system and observe how it evolves." According to physicist Professor Tobias Brixner, this is the credo of optical spectroscopy....
13.07.2018 | Event News
12.07.2018 | Event News
03.07.2018 | Event News
20.07.2018 | Power and Electrical Engineering
20.07.2018 | Information Technology
20.07.2018 | Materials Sciences