Recently, Prof. Lee's research team developed a fully functional flexible memory that is not affected by cell-to-cell interference. They solved the cell-to-cell interference issue by integrating a memristor (a recently spotlighted memory material as next-generation memory elements) with a high-performance single-crystal silicon transistor on flexible substrates. Utilizing these two advanced technologies, they successfully demonstrated that all memory functions in a matrix memory array (writing/reading/erasing) worked perfectly.
Prof. Lee said, "This result represents an exciting technology with the strong potential to realize all flexible electronic systems for the development of a freely bendable and attachable computer in the near future."
This result was published in the October online issue of the Nano Letters ACS journal.
Lan Yoon | EurekAlert!
A materials scientist’s dream come true
21.08.2018 | Friedrich-Alexander-Universität Erlangen-Nürnberg
Novel sensors could enable smarter textiles
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Scientists at the University of California, Los Angeles present new research on a curious cosmic phenomenon known as "whistlers" -- very low frequency packets...
Scientists develop first tool to use machine learning methods to compute flow around interactively designable 3D objects. Tool will be presented at this year’s prestigious SIGGRAPH conference.
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Researchers from TU Graz and their industry partners have unveiled a world first: the prototype of a robot-controlled, high-speed combined charging system (CCS) for electric vehicles that enables series charging of cars in various parking positions.
Global demand for electric vehicles is forecast to rise sharply: by 2025, the number of new vehicle registrations is expected to reach 25 million per year....
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