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A novel appliance for monitoring of wet chemical etch activation was developed at Saarland University. A desired final point of the etch activation (etch stop) can be determined by continual measurement during the wet chemical structure activation. The method is suitable for any plane-parallel substrates which are optically transparent in at least one partition of the spectrum. In particular, the following substrates are of great interest: Si, GaAs, SiC, GaN, Ge, silicon and other III-IV semiconductors.
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Universität des Saarlandes Wissens- und Technologietransfer GmbH PatentVerwertungsAgentur der saarländischen Hochschulen
Phone: +49 (0)681/9386340
Contact
Dipl.-Kfm. Axel Koch MBA
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