New Magnetic RAM Cell Design and Method for Stable and Fast Writing
The novel magnetic ram design and switching method guarantee a much higher stability against unwanted dipolar interaction between neighbouring MRAM cells than conventional cells. A 3D analysis of the switching and the stability of the magnetization by micromagnetic simulations show stable switching rates up to 1.4 GHz for pulses shaped according to CMOS specifications. Furthermore, the method allows successive writings of a memory cell without time delay due to a pre-read of the bit configuration. Finally, two different wiring schemes are proposed: one involving the application of a bipolar field pulse; the other based on the application of unipolar field pulses.
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