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New Method for Reading/Writing for Magnetic Random Access Memory

05.06.2014

Compared to conventional memory modules Magnetic memory cells have the important advantage that they do not need permanent current supply to save data, they only need current to change the information of the memory module. At present several MRAM technologies are beeing developed. In the present memory the fact is used that on short time scales the course of the magnetization in a switching event is governed by precession. In the case of long writing pulses (e. g. >10ns) the switching properties are dominated by dissipative mechanisms, which is demonstrated in Fig. 1 by the clear boarder line between switched and non-switched regions. For shorter writing pulse durations the switching properties will be affected largely by the precessional properties of the magnetization. In particular the actual direction of the magnetization vector at pulse termination will determine the bit status stored in the memory cell. This is shown in Figs. 2 to 4, which show an increasingly more complex switching scenario with decreasing pulse duration, evidenced by the more complex boarder line between the regions of switching and non-switching. On the basis of these ideas there have been realized a concept for an MRAM with very short switching times, which is optimized for maximum switching reliability and minimum power consumption

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