Memory Cell for Data Storage

<strong>Background</strong><br>

Computer data storage can be classified into volatile and non-volatile storage. Volatile memories like dynamic random access memories (DRAMs) are short-term memories with high write speed but require an external power source for data storage. Whereas non-volatile flash memories do not need an external power source, store data for years but write information about 1000 times slower than DRAMs.<br><br> <strong>Technology</strong><br> This novel semiconductor nanostructure based memory cell combines the advantages of non-volatility of flash memories and the performance and endurance of a DRAM. The memory comprises a strained double-heterostructure having an inner semiconductor layer comprising quantum dots and is sandwiched between tow outer semiconductor layers. The memory cell uses holes as charge carriers. </p> <b>Benefits:</b> <ul> <li>Hole storage</li> <li>Fast write/erase times </li> <li>High switching speed</li> <li>Data storage over years</li> <li>Modulation-doped field effect transistor (MODFET) type </li> <li>Uses semiconductor nanostructures (quantum dots, -wires or -wells) </li> </ul> <p><strong>IP Rights</strong><br> US patent application (12/2010)<br> PCT application </p> <p><strong>Origin</strong><br> Technische Universität Berlin</p>

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