GaN Gunn Diode for High Frequency and High Power Signal Generation
The new vertical GaN-based Gunn device is made on GaN substrate and able to generate high power microwave signals. By developing special contacting, means of a stable NDR (Negative Differential Resistivity) region could be achieved. Thereby, electrical fields which are considerably higher than the threshold value can be applied without electromigration effects from the contacts.
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