Galliumnitrit-Halbleiter
The invention relates to a method to wax of gallium nitride
semiconductor material on a sapphire substrate. The substrate can serve for the production of electronic components or as substrate for the epitaxy of other layers. The method of the invention is easy to realize and suited for the industrial application. It further assures the production of highquality GaN layers.
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PVA Mecklenburg-Vorpommern AG
Phone: +49 (0)381/49 74 74 0
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Moritz v. Grotthuss, Dr. Rüdiger Werp
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