Bipolartransistor II
The patented invention refers to a method for manufacturing heterostructure bipolar InP-transistors based on III-V semiconductors. The production of indium phosphide (InP)-based heterostructure bipolar transistors comprises ion implanting regions of the semiconductor material to be etched away and wet chemical etching.
This invention simplifies the production process of mmwave- transistors. The three-dimensional layer structure results in lower power dissipation and improved amplifier- and frequency characteristics. Transistors built by the patented method are more efficient and have a higher limit frequency than comparable bipolar transistors. They are also easier to reproduce.
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