A simple one-step process that produces both n-type and p-type doping of large-area graphene surfaces could facilitate use of the promising material for future electronic devices. The doping technique can also be used to increase conductivity in graphene nanoribbons used for interconnects.
By applying a commercially-available spin-on-glass (SOG) material to graphene and then exposing it to electron-beam radiation, researchers at the Georgia Institute of Technology created both types of doping by simply varying the exposure time. Higher levels of e-beam energy produced p-type areas, while lower levels produced n-type areas.
The technique was used to fabricate high-resolution p-n junctions. When properly passivated, the doping created by the SOG is expected to remain indefinitely in the graphene sheets studied by the researchers.
"This is an enabling step toward making possible complementary metal oxide graphene transistors," said Raghunath Murali, a senior research engineer in Georgia Tech's Nanotechnology Research Center.
A paper describing the technique appears this week in the journal Applied Physics Letters. The research was supported by the Semiconductor Research Corporation and the Defense Advanced Research Projects Agency (DARPA) through the Interconnect Focus Center.
In the new doping process, Murali and graduate student Kevin Brenner begin by removing flakes of graphene one to four layers thick from a block of graphite. They place the material onto a surface of oxidized silicon, then fabricate a four-point contact device.
Electronic measurements showed that a graphene p-n junction created by the new technique had large energy separations, indicating strong doping effects, he added.
Researchers elsewhere have demonstrated graphene doping using a variety of processes including soaking the material in various solutions and exposing it to a variety of gases. The Georgia Tech process is believed to be the first to provide both electron and hole doping from a single dopant material.
Doping processes used for graphene are likely to be significantly different from those established for silicon use, Murali said. In silicon, the doping step substitutes atoms of a different material for silicon atoms in the material's lattice.In the new single-step process for graphene, the doping is believed to introduce atoms of hydrogen and oxygen in the vicinity of the carbon lattice. The oxygen and hydrogen don't replace carbon atoms, but instead occupy locations atop the lattice structure.
In volume manufacturing, the electron beam radiation would likely be replaced by a conventional lithography process, Murali said. Varying the reflectance or transmission of the mask set would control the amount of radiation reaching the SOG, and that would determine whether n-type or p-type areas are created.
"Making everything in a single step would avoid some of the expensive lithography steps," he said. "Gray-scale lithography would allow fine control of doping across the entire surface of the wafer."
For doping bulk areas such as interconnects that do not require patterning, the researchers simply coat the area with HSQ and expose it to a plasma source. The technique can make the nanoribbons up to 10 times more conductive than untreated graphene.
Because HSQ is already familiar to the microelectronics industry, the one-step approach to doping could help integrate graphene into existing processes, avoiding a disruption of the massive semiconductor design and fabrication system, Murali noted.
Over the past two years, researchers in the Nanotechnology Research Center had observed changes caused by application of HSQ during electrical testing. Only recently did they take a closer look at what was happening to understand how to take advantage of the phenomenon.
For the future, they'd like to better understand how the process works and whether other polymers might provide better results.
"We need to have a better understanding of how to control this process because variability is one of the issues that must be controlled to make manufacturing feasible," Murali explained. "We are trying to identify other polymers that may provide better control or stronger doping levels."
John Toon | EurekAlert!
Move over, lasers: Scientists can now create holograms from neutrons, too
21.10.2016 | National Institute of Standards and Technology (NIST)
Finding the lightest superdeformed triaxial atomic nucleus
20.10.2016 | The Henryk Niewodniczanski Institute of Nuclear Physics Polish Academy of Sciences
Researchers from the Institute for Quantum Computing (IQC) at the University of Waterloo led the development of a new extensible wiring technique capable of controlling superconducting quantum bits, representing a significant step towards to the realization of a scalable quantum computer.
"The quantum socket is a wiring method that uses three-dimensional wires based on spring-loaded pins to address individual qubits," said Jeremy Béjanin, a PhD...
In a paper in Scientific Reports, a research team at Worcester Polytechnic Institute describes a novel light-activated phenomenon that could become the basis for applications as diverse as microscopic robotic grippers and more efficient solar cells.
A research team at Worcester Polytechnic Institute (WPI) has developed a revolutionary, light-activated semiconductor nanocomposite material that can be used...
By forcefully embedding two silicon atoms in a diamond matrix, Sandia researchers have demonstrated for the first time on a single chip all the components needed to create a quantum bridge to link quantum computers together.
"People have already built small quantum computers," says Sandia researcher Ryan Camacho. "Maybe the first useful one won't be a single giant quantum computer...
COMPAMED has become the leading international marketplace for suppliers of medical manufacturing. The trade fair, which takes place every November and is co-located to MEDICA in Dusseldorf, has been steadily growing over the past years and shows that medical technology remains a rapidly growing market.
In 2016, the joint pavilion by the IVAM Microtechnology Network, the Product Market “High-tech for Medical Devices”, will be located in Hall 8a again and will...
'Ferroelectric' materials can switch between different states of electrical polarization in response to an external electric field. This flexibility means they show promise for many applications, for example in electronic devices and computer memory. Current ferroelectric materials are highly valued for their thermal and chemical stability and rapid electro-mechanical responses, but creating a material that is scalable down to the tiny sizes needed for technologies like silicon-based semiconductors (Si-based CMOS) has proven challenging.
Now, Hiroshi Funakubo and co-workers at the Tokyo Institute of Technology, in collaboration with researchers across Japan, have conducted experiments to...
14.10.2016 | Event News
14.10.2016 | Event News
12.10.2016 | Event News
24.10.2016 | Power and Electrical Engineering
24.10.2016 | Life Sciences
24.10.2016 | Life Sciences