The transistor laser, invented by scientists at the University of Illinois at Urbana-Champaign, has been full of surprises. Researchers recently coaxed the device to reveal fundamental properties of the transistor, and of the transistor laser, moving it a step closer to commercialization.
As reported in the April 3 issue of the journal Applied Physics Letters, Nick Holonyak Jr., Milton Feng, and colleagues at the U. of I. explored the current-voltage relationship in a transistor laser. During stimulated emission, the laser light allowed the scientists to see into the device and study its elusive electronic structure.
"We were able to look at the transistors operating characteristics, look inside of the transistor, and see features and behaviors that we couldnt see before," said Holonyak, a John Bardeen Chair Professor of Electrical and Computer Engineering and Physics. "The current-voltage characteristics were clearly distorted under stimulated recombination, compared to ordinary 58-year-old-transistor spontaneous recombination."
James E. Kloeppel | EurekAlert!
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