Straight edges, good. Wavy edges, bad. This simple description holds true whether you are painting the living room or manufacturing nanoscale circuit features.
A colorized scanning electron microscope image shows the "waviness" or roughness of edges on reference lines made of silicon that are about 100 nanometers wide. Credit: B. Bunday, SEMATECH/K. Talbott, NIST
A new NIST/SEMATECH technique should help semiconductor facilities improve measurement of the "linewidth roughness." Courtesy HDR Architecture, Inc./Steve Hall© Hedrich Blessing
In a technical paper* published in June, researchers at the National Institute of Standards and Technology (NIST) and SEMATECH describe an improved method for determining nanoscale "linewidth roughness," an important quality control factor in semiconductor fabrication. Their research shows that current industry measurement methods may be exaggerating roughness of the smoothest circuit features by 40 percent or more above true values.
As circuit features shrink in size to below 50 nanometers, wavy or rough edges within semiconductor transistors may cause circuit current losses or may prevent the devices from reliably turning on and off with the same amount of voltage.
Gail Porter | EurekAlert!
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Researchers from the Institute for Quantum Computing (IQC) at the University of Waterloo led the development of a new extensible wiring technique capable of controlling superconducting quantum bits, representing a significant step towards to the realization of a scalable quantum computer.
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COMPAMED has become the leading international marketplace for suppliers of medical manufacturing. The trade fair, which takes place every November and is co-located to MEDICA in Dusseldorf, has been steadily growing over the past years and shows that medical technology remains a rapidly growing market.
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'Ferroelectric' materials can switch between different states of electrical polarization in response to an external electric field. This flexibility means they show promise for many applications, for example in electronic devices and computer memory. Current ferroelectric materials are highly valued for their thermal and chemical stability and rapid electro-mechanical responses, but creating a material that is scalable down to the tiny sizes needed for technologies like silicon-based semiconductors (Si-based CMOS) has proven challenging.
Now, Hiroshi Funakubo and co-workers at the Tokyo Institute of Technology, in collaboration with researchers across Japan, have conducted experiments to...
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