The picture shows the 2 mile long linear accelerator as the background and the experiment and results superimposed as a schematic. The schematic shows the magnetic field surrounding the beam and the magnetic pattern (which is of micrometre size) written into a sample by the beam.
The speed of magnetic recording – a crucial factor in a computer’s power and multimedia capabilities – depends on how fast one can switch a magnet’s poles. An experiment at the Stanford Synchrotron Radiation Laboratory (SSRL) found that the ultimate speed of magnetic switching is at least 1,000 times slower than previously expected. The result, which appears in the April 22 issue of the journal Nature, has implications for future hard disk computer drive technologies.
In the push toward ever-faster magnetic recording, experts expected to find a physical limit, a threshold speed beyond which materials would respond chaotically. “If you had asked me a year ago, ‘How fast does one have to create a pulse that does not switch magnetization?’ my answer would have been one femtosecond (one thousandth of a trillionth of a second),” said Jo Stöhr, Deputy Director of SSRL. “Chaotic behavior was not expected in this experiment, which ran in the picosecond (trillionth-of-a-second) range.”
The SSRL is a division of the Stanford Linear Accelerator Center (SLAC), a U.S. Department of Energy (DOE) research facility operated by Stanford University. The collaboration for the Nature paper was led by SSRL scientists Hans Christoph Siegmann and Professor Joachim Stöhr , and included researchers from Seagate Technology, the world’s largest manufacturer of hard disk computer drives.
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The Institute of Semiconductor Technology and the Institute of Physical and Theoretical Chemistry, both members of the Laboratory for Emerging Nanometrology (LENA), at Technische Universität Braunschweig are partners in a new European research project entitled ChipScope, which aims to develop a completely new and extremely small optical microscope capable of observing the interior of living cells in real time. A consortium of 7 partners from 5 countries will tackle this issue with very ambitious objectives during a four-year research program.
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Silicon nanosheets are thin, two-dimensional layers with exceptional optoelectronic properties very similar to those of graphene. Albeit, the nanosheets are less stable. Now researchers at the Technical University of Munich (TUM) have, for the first time ever, produced a composite material combining silicon nanosheets and a polymer that is both UV-resistant and easy to process. This brings the scientists a significant step closer to industrial applications like flexible displays and photosensors.
Silicon nanosheets are thin, two-dimensional layers with exceptional optoelectronic properties very similar to those of graphene. Albeit, the nanosheets are...
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