The new system uses a layer of non-conducting material embedded with discrete (non-overlapping) silicon nanodots, each approximately 3 nanometers across. Each nanodot functions as a single memory bit.
To control the memory operation, this layer is then covered with a thin metallic layer, which functions as a "metal gate." The metal gate controls the "on" and "off" states of the transistor. The results are published in the American Institute of Physics' (AIP) journal Applied Physics Letters.
"The metal-gate structure is a mainstream technology on the path toward nanoscale complementary metal-oxide-semiconductor (CMOS) memory technology," said co-author Jia-Min Shieh, researcher, National Nano Device Laboratories, Hsinchu, Taiwan. "Our system uses numerous, discrete silicon nanodots for charge storage and removal. These charges can enter (data write) and leave (data erase) the numerous discrete nanodots in a quick and simple way."
The researchers were able to achieve this new milestone in speed by using ultra-short bursts of green laser light to selectively anneal (activate) specific regions around the metal layer of the metal gate of the memory. Since the sub-millisecond bursts of laser light are so brief and so precise, they are able to accurately create gates over each of the nanodots. This method of memory storage is particularly robust, the researchers explain, because if an individual charge in one of the nano-sites failed, it would barely influence the others. This enables a stable and long-lived data storage platform.
"The materials and the processes used for the devices are also compatible with current main-stream integrated circuit technologies," explains Shieh. "This technology not only meets the current CMOS process line, but can also be applied to other advanced-structure devices."
Article: "Fast Programming Metal-Gate Si Quantum Dot Nonvolatile Memory Using Green Nanosecond Laser Spike Annealing" is published in Applied Physics Letters.
Authors: Yu-Chung Lien (1), Jia-Min Shieh (1,2), Wen-Hsien Huang (1), Cheng-Hui Tu (2), Chieh Wang (2), Chang-Hong Shen (1), Bau-Tong Dai (1), Ci-Ling Pan (3), Chenming Hu (4), and Fu-Liang Yang (1).(1) National Nano Device Laboratories, Hsinchu, Taiwan
Charles Blue | EurekAlert!
Meteoritic stardust unlocks timing of supernova dust formation
19.01.2018 | Carnegie Institution for Science
Artificial agent designs quantum experiments
19.01.2018 | Universität Innsbruck
On the way to an intelligent laboratory, physicists from Innsbruck and Vienna present an artificial agent that autonomously designs quantum experiments. In initial experiments, the system has independently (re)discovered experimental techniques that are nowadays standard in modern quantum optical laboratories. This shows how machines could play a more creative role in research in the future.
We carry smartphones in our pockets, the streets are dotted with semi-autonomous cars, but in the research laboratory experiments are still being designed by...
What enables electrons to be transferred swiftly, for example during photosynthesis? An interdisciplinary team of researchers has worked out the details of how...
For the first time, scientists have precisely measured the effective electrical charge of a single molecule in solution. This fundamental insight of an SNSF Professor could also pave the way for future medical diagnostics.
Electrical charge is one of the key properties that allows molecules to interact. Life itself depends on this phenomenon: many biological processes involve...
At the JEC World Composite Show in Paris in March 2018, the Fraunhofer Institute for Laser Technology ILT will be focusing on the latest trends and innovations in laser machining of composites. Among other things, researchers at the booth shared with the Aachen Center for Integrative Lightweight Production (AZL) will demonstrate how lasers can be used for joining, structuring, cutting and drilling composite materials.
No other industry has attracted as much public attention to composite materials as the automotive industry, which along with the aerospace industry is a driver...
Scientists at Tokyo Institute of Technology (Tokyo Tech) and Tohoku University have developed high-quality GFO epitaxial films and systematically investigated their ferroelectric and ferromagnetic properties. They also demonstrated the room-temperature magnetocapacitance effects of these GFO thin films.
Multiferroic materials show magnetically driven ferroelectricity. They are attracting increasing attention because of their fascinating properties such as...
08.01.2018 | Event News
11.12.2017 | Event News
08.12.2017 | Event News
19.01.2018 | Materials Sciences
19.01.2018 | Health and Medicine
19.01.2018 | Physics and Astronomy