Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Electronics: Magnetic memories on the right track

28.08.2014

An investigation into switching characteristics provides new criteria for achieving faster switching of magnetic memories.

Computer hard drives store data by writing magnetic information onto their surfaces. In the future, magnetic effects may also be used to improve active memory in computers, potentially eliminating the need to ‘boot up’ a computer. One way to achieve this is through a memory technology known as STT-MRAM that utilizes information stored in a pair of thin magnetic layers.


Pathways for the switching of a magnetic layer in an STT-MRAM device depend on the relative alignment of the two layers in the device.

Copyright : 2014 A*STAR Institute of High Performance Computing

By performing calculations, Chee Kwan Gan and colleagues from the A*STAR Institute of High Performance Computing have proposed ways to improve STT-MRAM memory through identifying design options for achieving faster switching speeds, and hence faster data write times [1].

In STT-MRAM devices, the relative orientation of the magnetic fields in the two thin layers determines the electrical resistance experienced by a current flowing through the device. If the magnetizations of both layers are aligned in the same direction, then the electrical resistance will be lower than when the layers have different magnetic alignments.

Switching the device between different magnetic states — which corresponds to writing information into the memory — is achieved by electrons whose magnetic property, the spin, is aligned in one direction. Collectively, these electrons are able to change the direction of the magnetization in one of the layers. The time it takes to switch the magnetic direction depends on several factors, including the initial relative orientation of the magnetic fields in the two layers. The magnetization of the switched layer can follow various complex paths during the switching process (see image).

In previous experiments, the switching process was found to depend on two parameters. Using their computational model, the researchers could focus on one parameter — the less-studied ‘field-like’ term — that accounts for the relative orientation of the magnetic fields in both layers. The strength of this term depends on various factors, such as the device geometry and the materials used.

The calculations by the researchers show that, for devices with a strong field-like term, there is greater potential to reduce switching times than for devices in which the field-like term is negligible. Gan explains that this discovery will assist the development of improved STT-MRAM devices. “Our findings will motivate experimentalists to fabricate devices with strong field-like terms,” says Gan.

Furthermore, a better understanding of the origin of the field-like term is needed, adds Gan. “Although the effect of the field-like term has been confirmed experimentally and investigated in this work through simulations, it is important to understand its physical origins in order to improve material design.”

Reference

1. Tiwari, R. K., Jhon, M. H., Ng, N., Srolovitz, D. J. & Gan, C. K. Current-induced switching of magnetic tunnel junctions: Effects of field-like spin-transfer torque, pinned-layer magnetization orientation, and temperature. Applied Physics Letters 104, 022413 (2014).

Lee Swee Heng | Research SEA News
Further information:
http://www.research.a-star.edu.sg/research/7024
http://www.researchsea.com

Further reports about: A*STAR Electronics Magnetic Science electrons factors layers magnetization materials memories orientation resistance

More articles from Physics and Astronomy:

nachricht Astronomers release most complete ultraviolet-light survey of nearby galaxies
18.05.2018 | NASA/Goddard Space Flight Center

nachricht A quantum entanglement between two physically separated ultra-cold atomic clouds
17.05.2018 | University of the Basque Country

All articles from Physics and Astronomy >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Explanation for puzzling quantum oscillations has been found

So-called quantum many-body scars allow quantum systems to stay out of equilibrium much longer, explaining experiment | Study published in Nature Physics

Recently, researchers from Harvard and MIT succeeded in trapping a record 53 atoms and individually controlling their quantum state, realizing what is called a...

Im Focus: Dozens of binaries from Milky Way's globular clusters could be detectable by LISA

Next-generation gravitational wave detector in space will complement LIGO on Earth

The historic first detection of gravitational waves from colliding black holes far outside our galaxy opened a new window to understanding the universe. A...

Im Focus: Entangled atoms shine in unison

A team led by Austrian experimental physicist Rainer Blatt has succeeded in characterizing the quantum entanglement of two spatially separated atoms by observing their light emission. This fundamental demonstration could lead to the development of highly sensitive optical gradiometers for the precise measurement of the gravitational field or the earth's magnetic field.

The age of quantum technology has long been heralded. Decades of research into the quantum world have led to the development of methods that make it possible...

Im Focus: Computer-Designed Customized Regenerative Heart Valves

Cardiovascular tissue engineering aims to treat heart disease with prostheses that grow and regenerate. Now, researchers from the University of Zurich, the Technical University Eindhoven and the Charité Berlin have successfully implanted regenerative heart valves, designed with the aid of computer simulations, into sheep for the first time.

Producing living tissue or organs based on human cells is one of the main research fields in regenerative medicine. Tissue engineering, which involves growing...

Im Focus: Light-induced superconductivity under high pressure

A team of scientists of the Max Planck Institute for the Structure and Dynamics of Matter (MPSD) at the Center for Free-Electron Laser Science in Hamburg investigated optically-induced superconductivity in the alkali-doped fulleride K3C60under high external pressures. This study allowed, on one hand, to uniquely assess the nature of the transient state as a superconducting phase. In addition, it unveiled the possibility to induce superconductivity in K3C60 at temperatures far above the -170 degrees Celsius hypothesized previously, and rather all the way to room temperature. The paper by Cantaluppi et al has been published in Nature Physics.

Unlike ordinary metals, superconductors have the unique capability of transporting electrical currents without any loss. Nowadays, their technological...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

VideoLinks
Industry & Economy
Event News

Save the date: Forum European Neuroscience – 07-11 July 2018 in Berlin, Germany

02.05.2018 | Event News

Invitation to the upcoming "Current Topics in Bioinformatics: Big Data in Genomics and Medicine"

13.04.2018 | Event News

Unique scope of UV LED technologies and applications presented in Berlin: ICULTA-2018

12.04.2018 | Event News

 
Latest News

Supersonic waves may help electronics beat the heat

18.05.2018 | Power and Electrical Engineering

Keeping a Close Eye on Ice Loss

18.05.2018 | Information Technology

CrowdWater: An App for Flood Research

18.05.2018 | Information Technology

VideoLinks
Science & Research
Overview of more VideoLinks >>>