Infineon Technologies (FSE/NYSE: IFX) and Clariant Corporation’s AZ Electronic Materials business (Somerville, N.J., USA) have signed an agreement to jointly develop photoresists for 157 nm exposure technology. The goal is to accelerate qualification of this technology for volume production.
The photoresist materials to be developed in this project will specifically enable Infineon to qualify the 157 nm technology for producing 55 nm structures in DRAM (dynamic random access memory) semiconductor chip production.
The International Technology Roadmap for Semiconductors, which describes the technology and materials needed for future chip generations, predicts that 55 nm structures will be in volume production beginning in 2007. One of the mainstream candidate technologies for achieving these dimensions is 157 nm lithography, a technology that uses fluorine molecular lasers emitting at the vacuum ultraviolet wavelength of 157 nm.
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